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Spatially and temporally resolved exciton diffusion experiments on a two-dimensional WSe2/hBN/MoSe2 heterostructure are reported, where an excitation-power-dependent exciton diffusion pattern is observed and phenomena with dipole–dipole repulsive interaction are quantitatively modelled.
Researchers demonstrate the tuning of a plasmonic laser by magneto-optical effects. The results offer a new pathway for externally adjusting nanolasers.
By coupling plasmonic resonators with a semiconductor heterostructure, researchers control the nonlinear response by a bias voltage, thereby enabling spectral tuning, dynamic intensity modulation and dynamic beam manipulation for second-harmonic generation.
By combining scanning tunnelling microscopy and attosecond technologies, the coherent electronic motion generated in molecules by carrier-envelope-phase-stable laser pulses is visualized at ångström-scale spatial resolution and subfemtosecond temporal resolution.
Researchers demonstrate the transfer of photons from one storage nanocavity into another by applying a voltage pulse. A transfer efficiency of 76% is achieved.
Light-field-induced electron dynamics in a silicon dioxide dielectric system are exploited to directly measure the attosecond relative electronic delay response in the dielectric system, potentially extending the speed of data processing and information encoding into the petahertz realm.
Researchers demonstrate a microring cavity with a photonic crystal on its inside edge, which enables a simultaneous high quality factor (1,000,000) and slow light (10 times slower than for conventional whispering gallery modes). Defect modes with a high quality factor (600,000) and high localizations (20 times smaller) are also enabled.
The quantum aspect of soliton microcomb from an integrated silicon carbide microresonator is studied in several regimes — below threshold, above threshold and in the soliton regime — using a single-photon optical spectrum analyser for second-order photon correlation measurement.
Waveforms of mid-infrared few-cycle optical pulses are captured in a single shot by measuring nonlinear photocurrents in a Si-based image sensor chip. The temporal resolution of waveforms is determined by the spatial resolution of the image sensor.
A four-port programmable interferometer based on aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides is reported. Its low-power mechanism, which can be fabricated in a complementary metal–oxide–semiconductor foundry, facilitates operation at cryogenic temperatures.
Near-infrared emission at around 2 µm is observed from HgTe nanocrystals. LEDs based on this material platform could prove to be a useful low-cost, convenient light source for applications in gas sensing and other tasks.
Absorption lineshape of H2 is coherently controlled by using intense near-infrared laser pulses. Depending on the time delay between the near-infrared and extreme ultraviolet pulses, the profiles display a Lorentzian or an asymmetric Fano lineshape.
As an alternative to high-resolution fabrication by two-photon absorption, researchers demonstrate a two-step absorption process that employs inexpensive light sources.
Near-transform-limited 630 fs pulses with 4.5 W of peak power are generated by compensating the dispersion of a quantum cascade laser emitting around 8 μm. Their temporal nature is assessed by a new method called asynchronous upconversion sampling.
Dual-comb digital holography based on an interferometer composed of two frequency combs of slightly different repetition frequencies and a lensless camera sensor allows highly frequency-multiplexed holography with high temporal coherence.
Visible-spectrum silicon nitride thermo-optic phase modulators based on adiabatic micro-ring resonators with a small device footprint and low power consumption, of potential use for applications like augmented-/virtual-reality goggles, quantum information processing circuits and optogenetics, are presented.
Highly efficient upconversion of light by organic semiconductor heterojunction interfaces is demonstrated. This process is enabled by charge separation- and recombination-mediated charge transfer states at the interface.
By sandwiching a germanium fin between complementary in situ-doped silicon layers, a waveguide-coupled germanium photodiode with a 3-dB bandwidth of 265 GHz, accompanied by high responsivity and low dark current, is realized.
Direct generation of few-cycle high-energy visible pulses is demonstrated via the nonlinear mixing of hollow-core fibre modes. Compression of near-infrared laser pulses by a factor of 40 with no additional dispersion compensation delivers 4.6 fs, 20 μJ pulses (~2 cycles, ~4 GW peak power) centred at around 600 nm.
