Reviews & Analysis

This Review examines the development of smart textiles for application in personalized healthcare, examining the different platform technologies, fabrication strategies and clinical scenarios, as well as the current commercial and regulatory landscape.

Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.

This Perspective examines the limitations of ultra-reliable and low-latency communication (URLLC) used in fifth-generation (5G) communication systems and proposes key research directions for the next generation of URLLC, termed extreme ultra-reliable and low-latency communication.

Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

Multi-layer programmable metasurfaces can be used to construct diffractive neural networks in which radio waves are directly processed.

In-memory computing chips based on magnetoresistive random-access memory devices can provide energy-efficient hardware for machine learning tasks.

Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm² V^–1 s^–1.