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Reliable memristive devices in which switching is based solely on electronic effects can be created from amorphous silicon by doping with oxygen and nitrogen.
A nanolithography technique that uses a heated scanning probe tip can precisely pattern metal electrodes on two-dimensional semiconductors, creating field-effect transistors with exceptional performance.
The compressive buckling of lithographically defined, two-dimensional patterns can create three-dimensional piezoelectric microsystems with a range of potential applications.
