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A surface electromyography biosensing system that is based on a screen-printed, conformal electrode array and has in-sensor adaptive learning capabilities can classify human gestures in real time and with high accuracy.
Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal–oxide–semiconductor circuits to be created.
The integration of active electronic systems and meta-elements using commercial silicon fabrication techniques can be used to create scalable and dynamically programmable terahertz metasurfaces.
Commercial complementary metal–oxide–semiconductor and resistive random-access memory technologies can be used to create multibit compute-in-memory circuits capable of fast and energy-efficient inference for use in small artificial intelligence edge devices.
Transistors that use two-dimensional black phosphorus as the active material can dynamically switch between p-type and n-type operation, and can be used to create security primitive circuits with polymorphic NAND/NOR obfuscation functionality.
A spin–orbit ferromagnetic single layer of (Ga,Mn)As can have a magnetization switching current density as low as 4.6 × 104 A cm−2 by suppressing the field-like torque via control of the current direction and film thickness.
Electrical and short optical pulses can be used to deterministically induce and reverse a nano-fragmented domain state in antiferromagnetic CuMnAs, in a process that can be probed via changes in the resistance of the system.
The magnetization and exchange bias field in an IrMn/CoFeB bilayer can be independently switched using a current-controlled spin–orbit torque generated in the antiferromagnetic IrMn layer.
Carbon-related point defects can be isolated in a commercial silicon-on-insulator wafer, acting as artificial atoms that provide efficient polarized single-photon emission at wavelengths suitable for long-distance propagation in optical fibres.
Using a gate decomposition strategy that requires the calibration of a single pulse, a family of XY entangling gates can be implemented in a superconducting qubit architecture and used to reduce circuit depth for generic quantum algorithms.
An epicardial patch made from materials that match the mechanical softness of heart tissue can perform spatiotemporal mapping of electrophysiological activity, as well as strain and temperature sensing, pacing and ablation therapies, and energy harvesting, while deforming with a beating heart.
The magnetization of a cobalt thin film can be reversed by spin–orbit torques using picosecond electrical pulses that are generated by photoconductive switches.
Nanoscale magnetic skyrmions that are generated in metallic multilayers using on-chip heating diffuse from hot to cold regions and can be thermoelectrically detected via the Nernst voltage.
Nanoscale electrodes fabricated using adhesion lithography can be combined with solution-processed metal oxide semiconductors to create Schottky diodes with performance suitable for 5G communications and beyond.
Green perovskite light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness can be created by depositing an ultrathin layer of strongly polar lithium fluoride between the perovskite and hole-transport layers.
High-density memristive crossbar arrays made from two-dimensional hexagonal boron nitride can be fabricated with a yield of 98% and used to emulate artificial neural networks.
A magnonic directional coupler with submicrometre dimensions could be used as a building block for integrated magnonic devices, such as half-adders, that have low energy consumption and small footprint.
A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.
A nanoplasmonic technique was used to investigate in operando the switching properties of materials used in redox random access memories, providing insight into the operation and potential breakdown mechanisms of the devices.
One-dimensional molecular arrays on graphene field-effect transistors can be reversibly switched between different periodic charge states by tuning the graphene Fermi level via a back-gate electrode and by manipulating individual molecules, allowing them to function as a nanoscale shift register.