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An optoelectronic platform that operates at low power and uses position- and angle-independent wireless power harvesting can provide multimodal programmable control over optogenetic stimulation parameters.
Rudimentary circuit elements, including a binary wire and an OR gate, can be created through the patterning of dangling bonds on a hydrogen-terminated silicon surface.
Three-dimensional integrated circuits based on slot antennas and carbon nanotubes can combine plasmonics and electronics, and can be used to create unidirectional receivers and wavelength- and polarization-division multiplexing.
The interplay between spin–orbit and spin-transfer torques can be used to develop a low-power route to magnetization switching of perpendicular magnetic tunnel junctions without an external magnetic field.
A pH sensor made from a flexible charge-coupled device, and integrated with a temperature sensor, can be used to monitor the sweat pH and skin temperature of a person in real time.
Magnetic field sensors, which are based on the anisotropic magnetoresistance effect and arranged in a Wheatstone bridge configuration, can provide an artificial magnetoreception that allows a person to orientate in an outdoor setting and manipulate objects in virtual reality.
A hafnium oxide memristor crossbar array integrated with transistors can provide a provable key destruction scheme in which unique physical fingerprints are extracted by comparing the conductance of neighbouring memristors, and can only be revealed if a digital key stored on the same array is erased.
A comparison between the use of directed self-assembly and conventional patterning methods in the fabrication of 7 nm node FinFETs shows similar device performance, suggesting directed self-assembly could offer a simplified patterning technique for future semiconductor technology nodes.
A free-standing top contact design reduces the thermomechanical stress in microthermoelectric coolers, resulting in improved reliability and cooling stability.
Spin–orbit torque switching in a two-terminal magnetoresistive random access memory cell can reduce critical write current by more than 70% compared with an equivalent spin-transfer torque device.
A laser can be used to locally dope two-dimensional molybdenum ditelluride channels, allowing both n- and p-doped channels to be assembled within the same atomic plane and for device arrays of n–p–n bipolar junction transistor amplifiers and radial p–n photovoltaic cells to be fabricated.
Nitrogen–vacancy centres can be used as in situ quantum sensors to map the electric field in an electrical device based on a hydrogen-terminated diamond surface.
Device-to-device and cycle-to-cycle variations and leakage in memristor crossbar arrays can be alleviated with a memory cell design that uses the ratio of the resistances of two memristors to encode information, rather than the absolute resistance of a single memristor.
Vertically structured electronic synapses, which exhibit both short- and long-term plasticity, can be created using layered two-dimensional hexagonal boron nitride.
By combining strategies in material design and advanced microfabrication, three-dimensional integrated stretchable electronic devices can be created, including an eight-channel sensing system with Bluetooth communication capabilities that can be used to extract an array of signals from the human body.
By examining the dynamics of skyrmions and antiskyrmions using a combination of atomistic spin simulations, reduced-variable modelling and machine learning algorithms, it is shown that current-induced spin–orbit torques can lead to trochoidal motion and skyrmion–antiskyrmion pair generation.
Complementary logic devices based on spin–orbit torque can be created in which the tunable polarity of the voltage-controlled magnetic anisotropy effect is used to fabricate n-type and p-type spin logic devices.
A memristor-based hardware and software system that uses a tantalum oxide memristor crossbar can be used to solve static and time-evolving partial differential equations at high precision, and to simulate an argon plasma reactor.
Photodetectors made from single-crystalline nanowire arrays of layered metal-halide perovskites exhibit detectivities of more than 7 × 1015 jones, due to a nanowire structure that combines high resistance in the interior of the crystals and high conductivity at the edges of the crystals.