Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
The superionic phase transition in silver iodide can be used to tailor the carrier type in two-dimensional tungsten diselenide and create programmable transistors, diodes and logic gates, the functions of which can be erased by external triggers such as ultraviolet irradiation.
Wafer-scale monolayers of MoS2 can be used to create flexible transistors and circuits that exhibit on/off ratios of 1010, current densities of ~35 μA μm−1 and mobilities of ~55 cm2 V−1 s−1.
By integrating a MoS2 photodetector with a floating-gate memory device, a nanoscale collision detector can be created that mimics the escape response of the lobula giant movement detector neuron.
By using carbon nanotubes as a channel material, an ion gel as a gate and polyimide as a substrate, field-effect transistors can be created that have a high radiation tolerance and can be repaired by annealing.
An operational amplifier that uses the two-dimensional semiconductor molybdenum disulfide as the active material can be used to create complex analogue circuits, including inverters, integrators and amplifiers.
A two-terminal device that uses an array of carbon nanotubes as the source contact can excite electroluminescence from a variety of materials, producing electroluminescence from long-wave infrared to ultraviolet wavelengths, with onset voltages approaching the optical energy gap of the emitting material.
Monolayer graphene can be magnetized by coupling to an antiferromagnetic thin film of chromium selenide, resulting in an exchange splitting energy as high as 134 meV at 2 K.
An atomically thin high-κ gate dielectric of Bi2SeO5 can be formed via layer-by-layer oxidization of an underlying two-dimensional semiconductor, allowing high-performance field-effect transistors and inverters to be fabricated.
Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can create p-type dopant nanowires and p–n junctions by using diborane as a p-type dopant precursor.
Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm.
Sweat-activated, biocompatible batteries can be used to power flexible on-skin electronic systems that monitor and wirelessly transmit physiological signals.
A ferroelectric tunnel junction that uses copper indium thiophosphate as the ferroelectric barrier, and graphene and chromium as asymmetric contacts, can offer a high resistance ratio between on and off states.
Using commercial 0.8-μm metal-oxide thin-film transistor technology, a flexible processor chip can be built that has hardwired parameters for machine learning and is capable of smart applications such as odour recognition.
A memristor-based annealing system that uses an analogue neuromorphic architecture based on a Hopfield neural network can solve non-deterministic polynomial (NP)-hard max-cut problems in an approach that is potentially more efficient than current quantum, optical and digital approaches.
Fixed magnetic skyrmions that are stabilized without any external magnetic field can be manipulated using an electric field, providing an approach that could be used to create compact and energy-efficient devices
Wearable yarn-based stretchable sensor arrays, combined with machine learning, can be used to translate American Sign Language into speech in real time.
A homojunction device made from two-dimensional tungsten diselenide can be used to create circuits that exhibit multifunctional logic and neuromorphic capabilities with simpler designs than conventional silicon-based systems.
By integrating a single monocentric lens with a hemispherical silicon nanorod photodiode array, a wide-field-of-view camera is created that offers low optical aberration, deep depth of field and simple visual accommodation.
A clock synchronization method, which is based on optical clock distribution and clock phase caching, can provide subnanosecond clock and data recovery times for fast optical switching in large-scale data centre networks using off-the-shelf commercial transceivers.
A magnetoresistance effect that occurs in a platinum layer deposited on a magnon junction consisting of two insulating magnetic yttrium iron garnet layers separated by an antiferromagnetic nickel oxide spacer layer could be used to create spintronic and magnonic devices that are free from Joule heating.