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Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gallium arsenide, can be scaled down to a gate length of 14 nm.
An integrated circuit amplifier, which is fabricated in a commercial complementary metal–oxide–semiconductor (CMOS) process, can record both voltages and currents with performance that exceeds commercial benchtop instrumentation.
An ultraflexible organic differential amplifier, which is only 2 μm thick and can conform to a person’s skin, can be used to record electrocardiograms with a signal-to-noise ratio of 34 dB.
By integrating wireless stretchable on-skin sensor tags and flexible readout circuits attached to textiles using an unconventional radiofrequency identification design, a body area sensor network can be created that can continuously analyse a person’s pulse, breathing and body movement.
A reconfigurable wireless system locked to an exceptional point can be used to interrogate in vivo inductor–capacitor microsensors with a sensitivity 3.2 times beyond the limit of conventional readout schemes.
A compact platform for quantum magnetometry and thermometry can be created by integrating nitrogen–vacancy-based quantum sensing with complementary metal–oxide–semiconductor (CMOS) technology.
Quantum-mechanical band-to-band tunnelling can be used to create an energy-efficient ternary logic technology that can be fabricated on the wafer scale using complementary metal–oxide–semiconductor (CMOS) processes.
Thermoelectric generators based on nanostructured silicon thermopiles, which are fabricated on an industrial silicon CMOS process line and are thus compatible with integrated circuit technology, exhibit a high specific power generation capacity of up to 29 μW cm−2 K−2 near room temperature.
A programmable neuromorphic computing chip based on passive memristor crossbar arrays integrated with analogue and digital components and an on-chip processor enables the implementation of neuromorphic and machine learning algorithms.
High-performance MoS2 transistors can be created using 2-nm-thick CaF2 as a gate insulator, which forms a quasi van der Waals interface with the 2D semiconductor.
A readout scheme for quantum devices, which is inspired by one-transistor–one-capacitor dynamic random access memory and consists of CMOS field-effect transistors and quantum dots, could reduce the number of input lines per qubit and allow large-scale device arrays to be addressed.
Energy-efficient and secure wireless body sensor networks can be created by using conductive fabrics that support surface-plasmon-like modes at radio communication frequencies.
A radar-based sensor can monitor the individual vital signs—heartbeat and respiration—of multiple people in a real-world setting, keeping track of individual people during vigorous movement.
The topological Hall effect is observed at above room temperature in a bilayer heterostructure composed of thulium iron garnet and platinum, suggesting the formation of skyrmions in a magnetic insulator through the interfacial Dzyaloshinskii–Moriya interaction.
By combining a CMOS-based integrated circuit with flexible and collapsible radiating structures, a scalable phased array architecture can be fabricated that has an areal mass density of only 0.1 g cm−2.
Bilayer WSe2 field-effect transistors with near ideal device characteristics can be created using transferred via contacts made from metal-embedded hexagonal boron nitride.
A tunnel field-effect transistor with spin-dependent outputs that are voltage controllable and reversible can be created using a dual-gated graphene/CrI3/graphene tunnel junction.
Electronic components made from two-dimensional MoTe2 can be chemically synthesized and integrated in a single step, creating devices in which each component in the active layer is connected via covalent bonds.
Pulse engineering techniques can be used to reduce the average Clifford gate error rates for silicon quantum dot spin qubits down to 0.043%, a factor of three improvement over state-of-the-art silicon devices.