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Current-induced spin–orbit magnetic fields at an Fe/GaAs (001) interface can be controlled with an electric field in the Schottky barrier, an effect that could be used to develop low-power spin–orbit torque devices.
An asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molybdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier.
Electrons can tunnel through thin ferromagnetic CrBr3 barriers, sandwiched between graphene electrodes, via the emission of magnons, which suggests that these magnetic tunnel barriers could be used for spin injection.
A giant magnetoresistance sensor that has a topologically protected magnetic vortex state in the transducer element can provide low magnetic noise, a high linear regime and negligible hysteresis.
Single isolated magnetic skyrmions can be electrically written and deleted at room temperature in a magnetic device with a technologically relevant stripline geometry, a process that can be directly observed using time-resolved X-ray pump–probe measurements.
On-chip radio-frequency transformers made from three-dimensional self-rolled-up coils offer both high performance and an ultra-compact device footprint.
Implantable pressure and strain sensors based on biodegradable materials have been designed to naturally decompose after their useful lifetime, eliminating the need for surgical extraction of the device.
Wireless sensors employing a generalized parity–time-symmetry telemetric sensing technique exhibit finer spectral resolution and more sensitive frequency response compared to conventional passive sensors.
A special-purpose holography computing board, which uses eight large-scale field-programmable gate arrays, can be used to generate 108-pixel holograms that can be updated at a video frame rate.
DC-powered microwave amplifiers approach the quantum noise limit by using the interaction between microwave radiation and inelastic Cooper-pair tunnelling across a voltage-biased Josephson junction.
A hybrid system that combines a von Neumann machine with a computational memory unit can offer both the high precision of digital computing and the energy/areal efficiency of in-memory computing, which is illustrated by accurately solving a system of 5,000 equations using 998,752 phase-change memory devices.
A substrate-free solution process can create large-area two-dimensional tellurium crystals, which can be used to build field-effect transistors that exhibit air-stable performance at room temperature for over two months and high on-state current densities of 1 A mm–1.
Carbon nanotube-based thin-film transistors and integrated circuits, which offer low power consumption and highly uniform performance, can be transferred to arbitrary substrates, including biodegradable polymers, plant leaves, and a person's wrist.
High-performance carbon nanotube thin-film transistors and complementary circuits can be fabricated on flexible substrates, including ring oscillators that have a stage delay of only 5.7 ns.
Nonlinear circuit arrays can exhibit self-induced topological transitions as a function of input intensity and topological immunity against defects and disorder.
By exploiting the nonlinear and analogue tuning properties of memristors, robust security primitives can be fabricated using integrated memristive crossbar circuits.
The anomalous Hall effect has been observed in high-quality epitaxial thin films of non-collinear antiferromagnet Mn3Pt, and can be switched on and off using an electric field.
Using carbon nanotube transistors, stretchable temperature sensor circuits can be designed that suppress strain-dependent errors and achieve a measured inaccuracy of only ±1 °C within a uniaxial strain range of 0–60%
The direction of strain in a material can be detected using flexible giant magnetoresistive devices that consist of a strain-sensitive free layer and a strain-insensitive pinned layer.
The generation of a spin current by the anomalous Hall effect is observed by measuring the modulation in the ferromagnetic resonance linewidth of CoFeB/Cu/NiFe trilayer films.