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Long-range wireless data links can be created by combining a software-defined digital signal processing back end with on-chip high-power terahertz signal sources and broadband frequency mixers based on Schottky diode technology.
This Perspective explores the potential of large-area electronics in wirelessly powered sensor nodes for the Internet of Things, considering low-power circuits for digital processing and signal amplification, as well as diodes and printed antennas for data communication and radiofrequency energy harvesting.
A nanomesh sensor that is directly printed on a person’s hand and is coupled with an unsupervised meta-learning framework can provide user-independent and data-efficient recognition of different hand tasks.
A lithography method that is based on interfacial adhesion energy differences and physical etching processes can be used to fabricate more than 10,000 molybdenum disulfide field-effect transistors on six-inch wafers with a yield of around 100%.
Technology breakthroughs at the 2022 IEEE International Electron Devices Meeting, where transistors remain centre stage, 75 years after their invention.
An embedded 3D printing technique — which uses an alginate–polyacrylamide hydrogel supporting matrix and a conductive silver–hydrogel ink — can be used to fabricate hydrogel electronic devices containing various different embedded circuits.
A Bayesian machine can be implemented in a system with distributed memristors, allowing it to locally perform computation with minimal energy movement.
Using a conductive silver–hydrogel ink, three-dimensional circuits can be printed into a supporting hydrogel matrix that has a temporary, fluid-like state before curing to make fully encapsulated hydrogel electronics.
Floating-gate memristive synaptic devices that are fabricated using commercial complementary metal–oxide–semiconductor processes can be used to create energy-efficient restricted Boltzmann machines and deep belief neural networks.
The magnetic anisotropy of the van der Waals ferromagnet Fe5GeTe2 can be continuously tuned—from an initial out-of-plane orientation to a canted orientation and then finally to an in-plane orientation—using electrical gating.
By controlling ion-dynamic capacitance, electrolyte-gated transistors can be switched between different operating modes, providing flexible neural network implementations.
By combining p-type transistors made with silicon-on-insulator technology and n-type transistors made with two-dimensional molybdenum disulfide, heterogeneous complementary field-effect transistors can be fabricated on the wafer scale.
Using common solid-state electrolyte films, multimode transistors can be created that exhibit different characteristics—tunable synaptic weights, high apparent mobilities, sharp subthreshold swings and memristive conductances—on demand and could be used create neural networks that function in different modes as needed.
A van der Waals gap of 5.3 Å can be formed between a hafnium oxide dielectric and molybdenum disulfide channel through oxygen accumulation, which weakens the influence of dielectric defects on the channel material and results in transistors with low hysteresis and steep subthreshold slopes.