This is a preview of subscription content, access via your institution
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 digital issues and online access to articles
$119.00 per year
only $9.92 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Data availability
The data that support the findings of this study are available from the corresponding author upon reasonable request.
References
Liu, A. et al. High-performance inorganic metal halide perovskite transistors. Nat. Electron. 5, 78–83 (2022).
Horowitz, G. in Organic Electronics Advances in Polymer Science Vol. 223 (eds Grasser, T. et al.) 113–153 (Springer, 2010).
McCulloch, I., Salleo, A. & Chabinyc, M. Avoid the kinks when measuring mobility. Science 352, 1521–1522 (2016).
Choi, H. H., Cho, K., Frisbie, C. D., Sirringhaus, H. & Podzorov, V. Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2018).
Mitzi, D. B., Feild, C. A., Schlesinger, Z. & Laibowitz, R. B. Transport, optical and magnetic properties of the conducting halide perovskite CH3NH3SnI3. J. Solid State Chem. 114, 159–163 (1995).
Podzorov, V. Tutorial lecture ‘Organic Single Crystals 101’, slides 33–34, Fall 2011 MRS meeting, Boston MA, USA. Zenodo https://doi.org/10.5281/zenodo.1048409 (2017).
Yi, H. T., Chen, Y., Czelen, K. & Podzorov, V. Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors. Adv. Mater. 23, 5807–5811 (2011).
Liu, C. et al. Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors. Phys. Rev. Appl. 8, 034020 (2017).
Pang, C.-S. et al. Mobility extraction in 2D transition metal dichalcogenide devices - avoiding contact resistance implicated overestimation. Small 17, 2100940 (2021).
Meijer, E. J. et al. Switch-on voltage in disordered organic field-effect transistors. Appl. Phys. Lett. 80, 3838–3840 (2002).
Völkel, A. R., Street, R. A. & Knipp, D. Carrier transport and density of state distributions in pentacene transistors. Phys. Rev. B 66, 195336 (2002).
Benor, A., Hoppe, A., Wagner, V. & Knipp, D. Electrical stability of pentacene thin film transistors. Org. Electron. 8, 749–758 (2007).
Bruevich, V. et al. Intrinsic (trap-free) transistors based on epitaxial single-crystal perovskites. Adv. Mater. 34, 2205055 (2022).
Orton, J. W. & Powell, M. J. The Hall effect in polycrystalline and powdered semiconductors. Rep. Prog. Phys. 43, 1263–1307 (1980).
Choi, H. H. et al. Hall effect in polycrystalline organic semiconductors: the effect of grain boundaries. Adv. Funct. Mater. 30, 1903617 (2020).
Acknowledgements
V.B. and V.P. acknowledge partial support for their research via the Donald H. Jacobs Chair in Applied Physics at Rutgers University.
Author information
Authors and Affiliations
Contributions
V.B. and V.P. performed the analysis of the published data and wrote the manuscript.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing interests.
Peer review
Peer review information
Nature Electronics thanks the anonymous reviewers for their contribution to the peer review of this work.
Additional information
Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Supplementary information
Supplementary Information
Supplementary Discussion (Sections 1–3), with three equations and 15 references.
Rights and permissions
About this article
Cite this article
Podzorov, V., Bruevich, V. Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials. Nat Electron 7, 266–268 (2024). https://doi.org/10.1038/s41928-024-01154-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1038/s41928-024-01154-8