Abstract
Recently, materials with low dielectric properties have attracted particular attention because low dielectric properties are key factors in realizing next-generation communication devices with high-speed and low-loss signal transmission and processing and electronic components with high electrical breakdown voltages. In this study, phosphine sulfide (P=S) group-containing aromatic poly(ether)s with aliphatic substituents on the phosphorus atoms were developed for use as low dielectric materials, taking advantage of the low polarity of the P=S groups and the less polarizable nature of the aliphatic moieties. These polymers have moderate to high molecular weights (number-average molecular weights of 8900–35,000 and weight-average molecular weights of 31,900–178,000), good thermal stability (5% weight loss temperatures of 363–423 °C), and high glass transition temperatures (Tg = 210–219 °C). In addition, some of the polymers exhibited low dielectric constants (ε = 2.64–2.68 at 10 GHz and 2.56–2.59 at 20 GHz) and low dielectric dissipation factors (tanδ = 0.0034–0.0035 at 10 GHz and 0.0036–0.0037 at 20 GHz). These results may indicate that P=S group-containing aromatic poly(ether)s with high aliphatic contents are potentially applicable to electrically insulating materials with good dielectric properties in the GHz frequency range and could contribute to high-performance electronic devices.
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Acknowledgements
The authors thank Masato Koizumi (Materials Analysis Division, Open Facility Center, Tokyo Institute of Technology) for the high-resolution mass spectrometry data. This work was financially supported by JSPS KAKENHI grant number JP22K14722 and the Tokyo Tech Academy of Energy and Informatics.
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Hifumi, R., Ochiai, K. & Tomita, I. Synthesis of phosphine sulfide group-containing aromatic poly(ether)s with aliphatic substituents on the phosphorus atoms and low dielectric properties. Polym J (2024). https://doi.org/10.1038/s41428-024-00940-7
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DOI: https://doi.org/10.1038/s41428-024-00940-7