Abstract
Scaling of the metal oxide semiconductor (MOS) field-effect transistor has been the basis of the semiconductor industry for nearly 30 years. Traditional materials have been pushed to their limits, which means that entirely new materials (such as high-κ gate dielectrics and metal gate electrodes), and new device structures are required. These materials and structures will probably allow MOS devices to remain competitive for at least another ten years. Beyond this timeframe, entirely new device structures (such as nanowire or molecular devices) and computational paradigms will almost certainly be needed to improve performance. The development of new nanoscale electronic devices and materials places increasingly stringent requirements on metrology.
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References
International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2005); www.itrs.net
Thompson, S. E. et al. In search of “forever”, continued ltransistor scaling one new material at a time. IEEE Trans. Semiconduct. M. 18, 26–36 (2005).
Moore, G. Cramming more components onto integrated circuits. Electronics 38, 114–117 (1965).
Chang, L. L. et al. Extremely scaled silicon nano-CMOS devices. Proc. IEEE 91, 1860–1873 (2003).
Chang, L. L. et al. Moore's law lives on: ultra-thin body SOI and FinFET CMOS transistors look to continue Moore's law for many years to come. IEEE Circuits Device. 19, 35–42 (2003).
Chang, L. L., Ieong, M. & Yang, M. CMOS circuit performance enhancement by surface orientation optimization. IEEE Trans. Electron. Dev. 51, 1621–1627 (2004).
Chau, R., Datta, S. & Majumdar, A. Opportunities and Challenges of III–V Nanoelectronics for Future High-Speed, Low-Power Logic Applications. IEEE CSIC Symposium Technical Digest 17–20 (2005).
Taur, Y. et al. CMOS scaling into the nanometer regime. Proc. IEEE 85, 486–504 (1997).
Wilk, G. D., Wallace, R. M. & Anthony, J. M. High-kappa gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243–5275 (2001).
Wong, H. S. P., Frank, D. J., Solomon, P. M., Wann, C. H. J. & Welser, J. J. Nanoscale CMOS. Proc. IEEE 87, 537–570 (1999).
Muller, D. A. A sound barrier for silicon? Nature Mater. 4, 645–647 (2005).
Sah, C. T. Evolution Of The MOS-Transistor — from Conception To VLSI. Proc. IEEE 76, 1280–1326 (1988).
Song, S. C. et al. Integration issues of high-k and metal gate into conventional CMOS technology. Thin Solid Films 504, 170–173 (2006).
Jha, R., Lee, J., Majhi, P. & Misra, V. Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. Appl. Phys. Lett. 87, 223503 (2005).
Hisamoto, D. et al. FinFET — a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron. Dev. 47, 2320–2325 (2000).
Xiong, S. Y. & Bokor, J. Sensitivity of double-gate and finFET devices to process variations. IEEE Trans. Electron. Dev. 50, 2255–2261 (2003).
Anil, K. G., Henson, K., Biesemans, S. & Collaert, N. Layout density analysis of finFETs. Proc. 33rd ESSDERC 139–142 (2003).
Hutchby, J. A., Bourianoff, G. L., Zhirnov, V. V. & Brewer, J. E. Emerging research memory and logic technologies. IEEE Circuits Device. 21, 47–51 (2005).
Zhirnov, V. V., Hutchby, J. A., Bourianoff, G. I. & Brewer, J. E. Emerging research logic devices. IEEE Circuits Device. 21, 37–46 (2005).
Hanafi, H. I., Tiwari, S. & Khan, I. Fast and long retention-time nano-crystal memory. IEEE Trans. Electron. Dev. 43, 1553–1558 (1996).
Reed, M. A., Frensley, W. R., Matyi, R. J., Randall, J. N. & Seabaugh, A. C. Realization Of A 3-Terminal Resonant Tunneling Device: The Bipolar Quantum Resonant Tunneling Transistor. Appl. Phys. Lett. 54, 1034–1036 (1989).
Lent, C. S. & Isaksen, B. Clocked molecular quantum-dot cellular automata. IEEE Trans. Electron. Dev. 50, 1890–1896 (2003).
Lent, C. S., Isaksen, B. & Lieberman, M. Molecular quantum-dot cellular automata. J. Am. Chem. Soc. 125, 1056–1063 (2003).
Chen, J., Klinke, C., Afzali, A. & Avouris, P. Self-aligned carbon nanotube transistors with charge transfer doping. Appl. Phys. Lett. 86, 123108 (2005).
Chung, S. W., Yu, J. Y. & Heath, J. R. Silicon nanowire devices. Appl. Phys. Lett. 76, 2068–2070 (2000).
Cui, Y., Zhong, Z. H., Wang, D. L., Wang, W. U. & Lieber, C. M. High performance silicon nanowire field effect transistors. Nano Lett. 3, 149–152 (2003).
Chen, R. H., Korotkov, A. N. & Likharev, K. K. Single-electron transistor logic. Appl. Phys. Lett. 68, 1954–1956 (1996).
Reed, M. A. Molecular-scale electronics. Proc. IEEE 87, 652–658 (1999).
Reed, M. A. Molecular electronics: Back under control. Nature Mater. 3, 286–287 (2004).
Richter, C. A., Stewart, D. R., Ohlberg, D. A. A. & Stanley Williams, R. Electrical characterization of Al/AlOx/molecule/Ti/Al devices. Appl. Phys. A 80, 1355–1362 (2005).
Wang, W. Y., Lee, T. H. & Reed, M. A. Electronic transport in molecular self-assembled monolayer devices. Proc. IEEE 93, 1815–1824 (2005).
Arimoto, Y. & Ishiwara, H. Current status of ferroelectric random-access memory. MRS Bull. 29, 823–828 (2004).
Datta, S. & Das, B. Electronic Analog Of The Electrooptic Modulator. Appl. Phys. Lett. 56, 665–667 (1990).
Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).
Bauer, G. E. W., Brataas, A., Tserkovnyak, Y. & van Wees, B. J. Spin-torque transistor. Appl. Phys. Lett. 82, 3928–3930 (2003).
Nikonov, D. E. & Bourianoff, G. I. Spin gain transistor in ferromagnetic semiconductors: The semiconductor Bloch-equations approach. IEEE Trans. Nanotechnol. 4, 206–214 (2005).
Zhirnov, V. V., Cavin, R. K., Hutchby, J. A. & Bourianoff, G. I. Limits to binary logic switch scaling — a Gedanken model. Proc. IEEE 91, 1934–1939 (2003).
Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133–137 (1998).
Shor, P. W. Polynomial-time algorithms for prime factorization and discrete logarithms on a quantum computer. SIAM J. Comp. 26, 1484–1509 (1997).
Heath, J. R., Kuekes, P. J., Snider, G. S. & Williams, R. S. A defect-tolerant computer architecture: Opportunities for nanotechnology. Science 280, 1716–1721 (1998).
Sarpeshkar, R. Analog versus digital: Extrapolating from electronics to neurobiology. Neural Comput. 10, 1601–1638 (1998).
Diebold, A. C. Metrology technology for the 70-nm node: Process control through amplification and averaging microscopic changes. IEEE Trans. Semiconduct. M. 15, 169–182 (2002).
Diebold, A. C. & Joy, D. A critical analysis of techniques and future CD metrology needs. Solid State Technol. 46, 63 (2003).
Marchman, H. M. & Griffith, J. E. in Handbook of Silicon Semiconductor Metrology (ed. Diebold, A. C.) (Marcel Dekker, New York, 2001).
Diebold, A. C. et al. Characterization and production metrology of gate dielectric films. Mat. Sci. Semicon. Proc. 4, 3–8 (2001).
Diebold, A. C. et al. Thin dielectric film thickness determination by advanced transmission electron microscopy. Microscopy Microanal. 9, 493–508 (2003).
Ehrstein, J. et al. A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements. J. Electrochem. Soc. 153, F12–F19 (2006).
Tompkins, H. H. & McGahan, W. A. Spectroscopic Ellipsometry and Reflectometry (Academic Press, New York, 1999).
Guo, J., Wang, J., Polizzi, E., Datta, S. & Lundstrom, M. Electrostatics of nanowire transistors. IEEE Trans. Nanotechnol. 2, 329–334 (2003).
Vashaee, D. et al. Electrostatics of nanowire transistors with triangular cross sections. J. Appl. Phys. 99, 054310 (2006).
Fonoberov, V. A., Pokatilov, E. P., Fomin, V. M. & Devreese, J. T. Photoluminescence of tetrahedral quantum-dot quantum wells. Physica E 26, 63–66 (2005).
Tokura, Y., Sasaki, S., Austing, D. G. & Tarucha, S. Excitation spectra and exchange interactions in circular and elliptical quantum dots. Physica B 298, 260–266 (2001).
Bals, S., Van Tendeloo, G. & Kisielowski, C. A new approach for electron tomography: Annular dark-field transmission electron microscopy. Adv. Mater. 18, 892 (2006).
Cowley, J. M. Off-axis STEM or TEM holography combined with four-dimensional diffraction imaging. Microscopy Microanal. 10, 9–15 (2004).
Cumings, J., Zettl, A., McCartney, M. R. & Spence, J. C. H. Electron holography of field-emitting carbon nanotubes. Phys. Rev. Lett. 88, 056804 (2002).
Joy, D. C. The aberration corrected SEM. AIP Conference Proceedings 788, 535–542 (2005).
Kim, M. J., Wallace, R. M. & Gnade, B. E. HRTEM for nano-electronic materials research. Characterization and Metrology for ULSI Technology 788, 558–564 (2005).
Shekhawat, G. S. & Dravid, V. P. Nanoscale imaging of buried structures via scanning near-field ultrasound holography. Science 310, 89–92 (2005).
Fallahi, P. et al. Imaging a single-electron quantum dot. Nano Lett. 5, 223–226 (2005).
Garcia-Gutierrez, D. I. et al. Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode. J. Vac. Sci. Tech. B 24, 730–738 (2006).
Zhong, J. X. & Stocks, G. M. Localization/quasi-delocalization transitions and quasi-mobility-edges in shell-doped nanowires. Nano Lett. 6, 128–132 (2006).
Hannon, J. B., Kodambaka, S., Ross, F. M. & Tromp, R. M. The influence of the surface migration of gold on the growth of silicon nanowires. Nature 440, 69–71 (2006).
Cao, J., Wang, Q. & Dai, H. Electron transport in very clean, as-grown suspended carbon nanotubes. Nature Mater. 4, 745–749 (2005).
Na, P. S. et al. Investigation of the humidity effect on the electrical properties of single-walled carbon nanotube transistors. Appl. Phys. Lett. 87 (2005).
Piva, P. G. et al. Field regulation of single-molecule conductivity by a charged surface atom. Nature 435, 658–661 (2005).
Bonnell, D. A. & Shao, R. Local behavior of complex materials: scanning probes and nano structure. Current Opin. Solid St. M. 7, 161–171 (2003).
Castell, M. R., Muller, D. A. & Voyles, P. M. Dopant mapping for the nanotechnology age. Nature Mater. 2, 129–131 (2003).
Voyles, P. M., Grazul, J. L. & Muller, D. A. Imaging individual atoms inside crystals with ADF-STEM. Ultramicroscopy 96, 251–273 (2003).
Voyles, P. M., Muller, D. A., Grazul, J. L., Citrin, P. H. & Gossmann, H. J. L. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si. Nature 416, 826–829 (2002).
Voyles, P. M., Muller, D. A. & Kirkland, E. J. Depth-dependent imaging of individual dopant atoms in silicon. Microscopy Microanal. 10, 291–300 (2004).
Sayan, S. et al. Band alignment issues related to HfO2/SiO2/p-Si gate stacks. J. Appl. Phys. 96, 7485–7491 (2004).
Sayan, S. et al. Valence and conduction band offsets of a ZrO2/SiOxNy,/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study. Phys. Status Solidi B 241, 2246–2252 (2004).
Kerber, A. et al. Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed I-D.-V.-G. Microelectron. Eng. 72, 267–272 (2004).
Han, J. P. et al. Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO2 gate dielectric on ultrathin SiON buffer layer. IEEE Electron. Dev. Lett. 25, 126–128 (2004).
Heh, D. et al. Spatial distributions of trapping centers in HfO2/SiO2 gate stacks. Appl. Phys. Lett. 88, 152907 (2006).
Zangmeister, C. D., Robey, S. W., van Zee, R. D., Yao, Y. & Tour, J. M. Fermi level alignment and electronic levels in “molecular wire” self-assembled monolayers on Au. J. Phys. Chem. B 108, 16187–16193 (2004).
Kim, P., Odom, T. W., Jin-Lin, H. & Lieber, C. M. Electronic density of states of atomically resolved single-walled carbon nanotubes: van Hove singularities and end states. Phys. Rev. Lett. 82, 1225–1228 (1999).
Reich, S., Thomsen, C. & Ordejon, P. Electronic band structure of isolated and bundled carbon nanotubes. Phys. Rev. B 65, 155411 (2002).
Sfeir, M. Y. et al. Probing electronic transitions in individual carbon nanotubes by Rayleigh scattering. Science 306, 1540–1543 (2004).
Wildoer, J. W. G., Venema, L. C., Rinzler, A. G., Smalley, R. E. & Dekker, C. Electronic structure of atomically resolved carbon nanotubes. Nature 391, 59–62 (1998).
Lake, R., Brar, B., Wilk, G. D., Seabaugh, A. & Klimeck, G. in Compound Semiconductors 1997 Institute of Physics Conference Series 617–620 (1998).
Zimmerman, N. M., Huber, W. H., Fujiwara, A. & Takahashi, Y. Excellent charge offset stability in a Si-based single-electron tunneling transistor. Appl. Phys. Lett. 79, 3188–3190 (2001).
Hong, C. et al. Spin-polarized reflection in a two-dimensional electron system. Appl. Phys. Lett. 86, 32113 (2005).
Sayan, S. et al. Band alignment issues related to HfO2/SiO2/p-Si gate stacks. J. Appl. Phys. 96, 7485–7491 (2004).
Bussmann, E., Zheng, N. & Williams, C. C. Single-electron manpulation to and from SiO2 surface by electrostatic force microscopy. Appl. Phys. Lett. 86, 163109 (2005).
Bachilo, S. M. et al. Structure-assigned optical spectra of single-walled carbon nanotubes. Science 298, 2361–2366 (2002).
Odom, T. W., Jin-Lin, H., Kim, P. & Lieber, C. M. Atomic structure and electronic properties of single-walled carbon nanotubes. Nature 391, 62–64 (1998).
Diebold, A. Introduction of stress requires stress metrology methods. Solid State Technol. 48, 59 (2005).
Ku, J., Chang, J., Han, S., Ha, J. & Eom, J. Electrical spin injection and accumulation in ferromagnetic/Au/ferromagnetic lateral spin valves. J. Appl. Phys. 99, 08H705 (2006).
Lin, H. N. et al. Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs. IEEE Electron. Dev. Lett. 27, 659–661 (2006).
Richter, C. A., Hefner, A. R. & Vogel, E. M. A comparison of quantum-mechanical capacitance-voltage simulators. IEEE Electron. Dev. Lett. 22, 35–37 (2001).
Acknowledgements
The author acknowledges the support of the Jonsson School of Engineering at the University of Texas at Dallas, the NIST Office of Microelectronics Programs, and the NIST Semiconductor Electronics Division. Contribution of the National Institute of Standards and Technology is not subject to US copyright. The author would like to thank Curt Richter, Steve Knight, David Seiler and Erik Secula for careful reading of the manuscript.
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Vogel, E. Technology and metrology of new electronic materials and devices. Nature Nanotech 2, 25–32 (2007). https://doi.org/10.1038/nnano.2006.142
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DOI: https://doi.org/10.1038/nnano.2006.142
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