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Crystallographic alignment of the two graphene layers in a van der Waals heterostructure leads to resonant tunnelling with the conservation of both energy and momentum.
Hot-electron effects in graphene can be used to detect terahertz radiation at room temperature with high sensitivity, low noise-equivalent power and a fast response time.
A spin- and valley-polarized photocurrent is generated, in an electric double-layer transistor, with a direction and magnitude that depends on the degree of circular polarization of the incident radiation and on an external electric field.
A large negative differential resistance is detected in a single-molecule break junction and theoretical models validate intrinsic resonant transport inside the molecule.
The optimization of the growth parameters of methylammonium lead halide nanostructures results in a high and reproducible power-conversion efficiency of perovskite solar cells.
Folding MoS2 monolayers to obtain bilayers with different stacking orders results in enhanced valley- and spin-polarizations compared with natural Bernal-stacked bilayers.
Single DNA hybridization events are detected using a biosensor that exploits plasmonic enhancements of whispering gallery modes in microsphere cavities.
The coupling of graphene resonators with superconducting cavities with quality factors exceeding 220,000 represents an important step towards the realization of efficient devices for force and mass sensing, and for studying the quantum regime of mechanical motion.
The charge transfer between two layers of different two-dimensional materials occurs at a much faster speed than expected, holding promise for efficient optoelectronic devices.
Nuclear magnetic resonance experiments on 100,000 nuclear spins in a quantum dot allows for the reversal of these spins back and forth as if they were a single unit.
Particle-based structures can be used to implement a functionally complete set of Boolean logic gates (YES, NOT, AND and OR), and can be made to bind to a target as a result of a computation.
In heterostructures of the transition metal dichalcogenides MoS2 and WSe2, atomically thin p–n junctions are created that show gate-tunable rectifying and photovoltaic behaviour mediated by tunnelling-assisted interlayer recombination.
The electron spin in a silicon-based quantum dot can be controlled electrically for as long as several tens of microseconds, which improves the prospects for quantum information processing based on this type of quantum dot.