Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
Can silicon ever be a true direct-bandgap semiconductor? The first observation of a new, short-lived photoluminescence band from silicon nanocrystals offers fresh hope.
Nanochannels fabricated by standard semiconductor techniques can exhibit enhanced cation mobilities that are up to four times as high as bulk values of the mobility.
A single α-haemolysin protein is inserted into a solid-state nanopore to form a hybrid structure that is potentially more suited towards creating wafer-scale device arrays for genomic sequencing and protein studies.
Thin films made of silver flakes and multiwalled carbon nanotubes decorated with silver nanoparticles are highly conductive and are capable of being stretched and printed.
An ultrafast visible band in the photoluminescence spectrum of silicon nanocrystals increases in intensity and shifts to longer wavelengths as the size of the nanocrystals decreases.
Aberration-corrected scanning transmission electron microscopy, combined with dynamical multislice image simulations, can identify individual atoms in supported rhodium–iridium clusters and map their full structure.
Carbon-nanotube transistors exhibit improved performance when their channel length is scaled from 3 μm to 15 nm, and are adversely affected by contact length scaling below 100 nm.