Reviews & Analysis

By incorporating oxygen into the chemical vapour deposition growth of molybdenum disulfide, sulfur vacancies can be passivated and contact resistances lowered.

Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.

Printed thin-film transistors and circuits fabricated on plastic strips can be wrapped around fibres to create stretchable electronics.

Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.

Textile-integrated metamaterials can be used to propagate signals across the body, and between different people, allowing a network of sensors to be connected and powered.

A thin and rollable high-resolution image sensor can be created by placing solution-processed metal halide perovskite photodiodes over an amorphous indium gallium zinc oxide transistor backplane.

Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.

The direction of photocurrent in a p–n heterojunction device can be switched by using different wavelengths of light.

Long and thin graphene nanoribbons with atomically smooth edges can be fabricated in high yield by squashing carbon nanotubes.

Vertical organic thin-film transistors can be used to create complementary circuits that operate at high frequencies.

A flexible microprocessor with more than 18,000 NAND gates can be manufactured using metal-oxide thin-film transistor technology.

An electronic network of compact oscillatory circuits can be used to find the optimal ground state of Ising Hamiltonians.

An organic phototransistor with two complementary bulk heterojunctions exhibits light-intensity-dependent adaptation behaviour that mimics the behaviour of the human visual system.

The human body can be used as a medium to couple ambient energy and transmit power to wearable devices.

Magnetic tunnel junctions with a hybrid free layer design can be used to electrically read and write domain walls.

Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.

Sub-1-nm vertical field-effect transistors can be created by transferring pre-made metal film contacts onto two-dimensional materials.

A superconducting electromechanical device at cryogenic temperatures can be probed using optical fibres and a commercial phase modulator.