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10th Anniversary of LSA: Collection on Integrated and Optoelectronic Devices
2022 marks the 10th anniversary of Light: Science & Applications (LSA). In the past decade, LSA has published hundreds of outstanding researches covering the fundamentals and applications in all areas of optics and photonics. From those published papers, we have picked some on Integrated and Optoelectronic Devices to share with you, our readers. We hope this collection can stimulate more researches and practices in related fields, and promote further progress in optics and photonics research.
We develop Monet: a multichannel optical neural network architecture for a universal multiple-input multiple-channel optical computing based on a novel projection-interference-prediction framework, solving real-world advanced machine vision tasks optically.
A broadband organic phototransistor is achieved based on an air stable n-type organic semiconductor, which exhibits ultrahigh photoresponsivity in a wide wavelength range from the UV, visible to the NIR.
This review summarizes the advances of photonic accelerators from the viewpoint of photonic matrix multiplication, providing a guidance for all-optical or optoelectronic-hybrid AI hardware chip system.
The illustration depicts capacitive photoreceptor (CPR) mimicking the rod cell and its functionality simulation. CPRs connected to the sensing circuit followed by a spiking neural network mimics the retina functionality.
We report a waveguide-integrated BP/MoTe2 PN heterojunction photodetector. It presents ultralow dark currents and high responsivities, which has potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits.
Flexible optoelectronic anticounterfeiting device based on OLED paper can show different luminous states visible to the naked eye under light, electricity, and combined light and electricity stimulus.
A versatile manipulation of the optoelectronic properties within the Dirac-semimetals and its van der Waals heterostructures beyond skin-depth limit, opening up substantial potential for engineering spontaneous photocurrent with high SNR ratio and imaging at far-IR/THz band at room temperature.
This work successfully demonstrates that thin-film lithium niobate platform can bring polarization management devices into a new phase of that higher speed, smaller size, and lower cost.
A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.
The image depicts a schematic illustration of a van der Waals heterostructure used to electrically activate quantum emitters in hexagonal boron nitride.
A thermosensitive optoelectronic upconversion device based on integrated microscale LED and photodiode structures, with temperature dependent of spectral shift and intensity change.
A novel polarity-switchable photoelectrochemical photodetector based on III-nitride/MoSxcore-shell nanowires is constructed. Such unique device architecture provides a new route for multiple-band spectrally distinctive photodetection.
The forward-reverse framework based on machine learning for MASnxPb1-xI3 perovskite solar cells is reported. The practicability of bandgap model revealing asymmetrically-bowing shape and optimized Sn:Pb ratio are verified by experiments.
We show that a programmable photonic integrated processor can separate, directly in the optical domain, spatially-overlapped free-space optical beams with unknown shapes, sharing the same wavelength and polarization.
A new technology enables fast production of waveguide (SPIM-WG) based high performance optical devices with very low loss, precisely organized refractive index, arbitrarily variable cross-sections and high coupling efficiency.
This work not only presents photophysical processes of thermally activated delayed fluorescent emitters in a weak Fabry-Pérot cavity, but also establishes a connection between emitter orientation and Purcell effect.
The ligand-tailored SnO2 QDs ETL with multi-functional terminal groups in situ refines the buried interfaces with both the perovskite and transparent electrode via enhanced interface binding and perovskite passivation.
In photoactive materials, the fundamental understandings of hot charge carriers and a successful device design are the current challenges for the development of highly efficient hot carrier optoelectronic devices.
The incorporation of plasmonic core-shell nanostructures at the grain boundaries of perovskite films reduces the charge recombination loss through photo-brightening of trap states.
A monolithic InP/SOI platform with dislocation-free, site-controlled and in-plane InP sub-micron wire and large dimension InP membrane array selectively grown on (001) SOI platform.
Regulation of photovoltaic response in multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices by polarization and magnetization.