A silicon photonics modulator design approach is proposed, in which the inductive networks and termination resistors are designed in conjunction with the optical phase shifter. A complementary metal–oxide–semiconductor (CMOS) silicon photonics transmitter developed with this approach achieved 112 gigabaud transmission with an energy efficiency better than 1 pJ per bit.
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References
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This is a summary of: Li, K. et al. An integrated CMOS–silicon photonics transmitter with a 112 gigabaud transmission and picojoule per bit energy efficiency. Nat. Electron. https://doi.org/10.1038/s41928-023-01048-1 (2023).
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An approach for designing energy-efficient integrated silicon photonics transmitters. Nat Electron 6, 805–806 (2023). https://doi.org/10.1038/s41928-023-01051-6
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DOI: https://doi.org/10.1038/s41928-023-01051-6