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SPINTRONICS

Two-terminal MRAM with a spin

Nature Electronics volume 1, pages 496–497 (2018)Cite this article

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Spin–orbit torque can drive switching in a two-terminal magnetic memory device.

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Fig. 1: Three types of MRAM cell structure.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China

    Guoqiang Yu

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  1. Guoqiang Yu
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Correspondence to Guoqiang Yu.

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Yu, G. Two-terminal MRAM with a spin. Nat Electron 1, 496–497 (2018). https://doi.org/10.1038/s41928-018-0135-8

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