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Magnetic semiconductors

Holes respond to strain

Nature Materials volume 6, pages 472–473 (2007)Cite this article

Scanning tunnelling microscopy measurements on a diluted magnetic semiconductor reveal the effect of local strains on individual magnetic ions.

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Figure 1: Cross-sectional scanning tunnelling microscopy is used to investigate Mn impurities surrounding InAs quantum dots in GaAs.

MARK JAMES

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Authors and Affiliations

  1. Kevin W. Edmonds is in the School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, UK. kevin.edmonds@nottingham.ac.uk,

    Kevin W. Edmonds

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  1. Kevin W. Edmonds
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Edmonds, K. Holes respond to strain. Nature Mater 6, 472–473 (2007). https://doi.org/10.1038/nmat1942

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