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Temperature dependence for the power outputs of n-CdSe liquid junction cells

Abstract

Thin film n-CdSe photoanodes have great potential as efficient and inexpensive electrodes in liquid junction photovoltaics1–3. This stems from the stability of n-CdSe in the S/S2– electrolyte, its direct band gap4 of 1.7 eV and the large barrier height, ΦB(T), of 1 eV at the n-CdSe-S/S2– interface5. The recently reported 8% AM1 conversion efficiency for a cadmium chalcogenide thin film based cell6 suggests that these low cost devices may soon compete favourably with the conversion efficiencies of the more expensive single crystal solid state photovoltaics. In view of the increasing practical importance of this system, the study of any parameter which may affect its performance is relevant. We report here the dramatic effect of temperature on the power outputs of n-CdSe based cells.

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McCann, J., Kazacos, M. & Haneman, D. Temperature dependence for the power outputs of n-CdSe liquid junction cells. Nature 289, 780–782 (1981). https://doi.org/10.1038/289780a0

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