Abstract
IT has recently been shown1 that the growth striae found in semiconductor crystals grown by zone-melting techniques are caused by fluctuations in temperature in the melt from which the crystal is being grown. (The term growth-striae is used to describe a banded distribution of impurity revealed on etched crystal sections.) One of us has shown2 that the temperature fluctuations were a characteristic property of a liquid metal contained in a horizontal boat on which was impressed an axial temperature gradient. At lower temperature gradients, but still above some critical gradient, the temperature varied sinusoidally with time.
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CHEDZEY, H., HURLE, D. Avoidance of Growth-striae in Semiconductor and Metal Crystals grown by Zone-melting Techniques. Nature 210, 933–934 (1966). https://doi.org/10.1038/210933a0
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DOI: https://doi.org/10.1038/210933a0
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