Abstract
THE effect of stored holes in transistors has been reported by Meacham and Michaels1, and the importance of the effect in the design of switching circuits was stressed by speakers in the discussion following a paper by Williams and Chaplin2. Briefly, good circuit design often necessitates operating a transistor in the condition where the collector current is limited by an external resistance; in this condition the time of fall of collector current upon cessation of emitter current is found to be much slower than when the collector current is limited only by the current gain of the transistor. It is the time of fall of collector current which determines the maximum switching speed of a transistor.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Similar content being viewed by others
References
Meacham, L. A., and Michaels, S. A., Phys. Rev., 78, 175 (1950).
Discussion following paper by Williams, F. C., and Chaplin, G. B. B., Proc. Inst. Elect. Eng., Part III, 100, 66, p. 245 (1953).
Goucher, F. S., Phys. Rev., 81, 3, 475 (1951).
Lark-Horovitz, K., “Nuclear-bombarded Semi-Conductors” in “Semi-Conducting Materials” (Butterworths, London, 1951).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
FLORIDA, C., HOLT, F. & STEPHEN, J. Irradiation of Transistors. Nature 173, 397–398 (1954). https://doi.org/10.1038/173397b0
Issue Date:
DOI: https://doi.org/10.1038/173397b0
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.