Abstract
WHEN the principle of mass action is applied to explain the effect on the electrical properties of certain electronic semi-conductors having an ionic lattice structure, produced by varying the vapour pressure of one of the constituents of the substance, it is found that nf = KPυ1/n, (1) where nf is the concentration of charge carriers, which may be free electrons or holes, K is an equilibrium constant, Pυ is the vapour pressure, and n is a constant, negative for excess and positive for defect semi-conductors, which can be deduced from the chemical structure of the substance.
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References
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HOGARTH, C. Variation of Thermo-electric Power of Electronic Semi-Conductors with Vapour Pressure. Nature 161, 60–61 (1948). https://doi.org/10.1038/161060b0
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DOI: https://doi.org/10.1038/161060b0
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