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Magneto-transport measurements on thin metallic crystals of the transition metal dichalcogenide PtSe2 show signatures of ferro- and antiferromagnetic order depending on the number of layers and first-principles calculations suggest Pt vacancies at the surface as a plausible cause.
The atomic thickness of two-dimensional materials enables the realization of a small footprint transistor architecture for photoswitching logic computing in a single cell.
Eutectic Ga-In droplets can be functionalized with various polymers and co-polymers using atom transfer radical polymerization. The droplets are ready for direct solution processing to form liquid-metal nanocomposites for potential applications in soft robotics.
Gate reflectometry on an ancillary dot coupled to an electron reservoir is used to read the spin of a qubit in a CMOS device in a single shot with an average fidelity above 98% within 0.5 ms.
Thermal diffusion of skyrmions in a non-flat energy landscape shows exponential temperature dependence and can be used for a reshuffler device with potential application in probabilistic computing.
While measurement of an electron spin commonly destroys it, the quantum non-demolition measurement implemented here for an electron spin qubit in a semiconductor quantum dot preserves the measured spin and allows for exponential suppression of readout errors by repeated measurements.
Spin currents from an adjacent Pt layer can drive homochiral Néel domain walls in centrosymmetric rare-earth iron garnet films at more than 800 m s–1, taking advantage of the antiferromagnetic spin dynamics of the ferrimagnetic oxide.
MoS2 is shown to exhibit a stronger vdW interaction with graphite than with hexagon boron nitride, which is well described by Lifshitz theory and utilized to construct 2D heterostructures in a sophisticated way
Gate-tuning of a Fermi reservoir enables the deterministic loading of single electrons or holes into a localized quantum dot in a WSe2 monolayer and the observation of hybrid excitons originating from strong, spin-conserving tunnelling between the dot and the reservoir.
Under the application of a magnetic field, the 2D electron gas in a gated MoS2 monolayer becomes spin-polarized, the Coulomb interaction probably being key to the symmetry breaking.
Instead of using capacitively coupled charge sensors, which imply additional complexity in the device architecture, radiofrequency reflectometry on the gate defining the quantum dot can read out the spin state of a double quantum dot in a single shot.
While neutral-charge quantum dots in optically active WSe2 do not show spin-valley initialization, localized holes possess a net spin and their spin-valley state can be selected with the helicity of the laser excitation.
Lanthanide-doped nanoparticles could be used as labels for the imaging of biomolecules, potentially leading to a multicolour modality in electron microscopy.
A significant mobility increase in TMD-based field-effect transistors is achieved via engineering of nanometre-scale corrugations and crests in the dielectric substrate.
Ballistic avalanche phenomena in vertical InSe/BP heterostructures enable the demonstration of high-performance avalanche photodetectors and impact ionization transistors.