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A quantum point contact formed in the two-dimensional electron gas of a LaAlO3/SrTiO3 interface exhibits quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels.
The electrical current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be used to mimic the behaviour of biological synapses, providing devices that could be used for neuromorphic computing tasks such as pattern recognition.
A digital platform that integrates a metasurface based on electronic varactors with an optical interrogation network based on photodiodes can be programmed by visible light to implement electromagnetic functions, including microwave cloaking, illusion and vortex beam generation.
Pillars of antiferromagnetic PtMn, grown on a heavy-metal layer, can be reversibly switched between different magnetic states by electric currents, illustrating the potential of silicon-compatible antiferromagnetic materials in the development of memory and computing devices.
By isolating one-dimensional tellurium nanowires in boron nitride nanotubes, the electronic properties of the atomic chains can be measured and the structures used to create field-effect transistors.
A black phosphorus/Al2O3/black phosphorus heterostructure can be used to create a tunnel field-effect transistor in which the tunnelling current is in the transverse direction with respect to the drive current, leading to abrupt switching and a negative differential resistance with a peak-to-valley ratio of more than 100 at room temperature.
A liquid metal printing technique can be used to create monolayer and bilayer indium tin oxide, with the bilayer samples offering a transparency above 99.3% and a sheet resistance as low as 5.4 kΩ □−1.
Pressure sensors with a sensitivity of ~103−107 kPa−1, as well as rapid response speeds, low power consumption and excellent stability, can be created by integrating a conductive microstructured air-gap gate with two-dimensional semiconductor transistors.
An analysis of skyrmion dynamics at different temperatures and electric drive currents is used to develop a complete description of the skyrmion Hall angle in ferromagnetic multilayers from the creep to the flow regime and illustrates that skyrmion trajectories can be engineered for device applications.
By using a scanning probe to control the polarization of ferroelectric polymers deposited on the surface of two-dimensional transition metal dichalcogenides, optoelectronic and unconventional memory devices can be created based on lateral p–n junctions.
An electron beam technique can be used to write high-resolution doping patterns in graphene and MoS2 van der Waals heterostructures, and could allow doped circuit designs to be created.
A conformable imager with a resolution of 508 pixels per inch, a speed of 41 frames per second and a total thickness of only 15 μm can be used to capture images of fingerprints and veins, and to map pulse waves.
Time-resolved measurements show that current-induced magnetization switching in ferrimagnetic devices is faster and more energy-efficient than in ferromagnet devices.