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SPINTRONICS

Spin torques join forces in a memory device

Nature Electronics volume 1, pages 576–577 (2018)Cite this article

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A combination of spin–orbit and spin-transfer torques could be used to create a versatile magnetic random access memory.

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Fig. 1: Mechanisms of writing in magnetic tunnel junctions using electrical currents for magnetic random access memories.

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Authors and Affiliations

  1. Physical Electronics Research Laboratory (PERL), Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, USA

    Pedram Khalili Amiri

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  1. Pedram Khalili Amiri
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Correspondence to Pedram Khalili Amiri.

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Khalili Amiri, P. Spin torques join forces in a memory device. Nat Electron 1, 576–577 (2018). https://doi.org/10.1038/s41928-018-0164-3

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