Correction to: Nature https://doi.org/10.1038/s41586-023-05797-z Published online 22 March 2023
In the version of this article initially published, there were labelling errors in Fig. 2e(i), where the red text currently reading “004” appeared as “\(00\bar{6},\)” and in Fig. 4c, where the y-axis label currently reading “IDS (mA μm–1)” appeared as “IDS (μA μm–1).” The errors have been corrected in the HTML and PDF versions of the article.
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Tan, C., Yu, M., Tang, J. et al. Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 617, E13 (2023). https://doi.org/10.1038/s41586-023-06093-6
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DOI: https://doi.org/10.1038/s41586-023-06093-6
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