In the version of the News & Views article 'Spin transistors: Closer to an all-electric device' originally published (Nature Nanotech. 10, 21–22; 2015), the semiconductor heterostructure 'AlGaAs/GaAs' should have been 'InGaAs/InAlAs'. Corrected in the online versions after print 27 February 2015.
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The online version of the original article can be found at 10.1038/nnano.2014.305
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Correction. Nature Nanotech 10, 302 (2015). https://doi.org/10.1038/nnano.2015.55
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DOI: https://doi.org/10.1038/nnano.2015.55
