Temperature dependence of flatband potentials at semiconductor–electrolyte interfaces

Abstract

THE possible utilisation of photoelectrolysis for solar energy conversion suggests that the effects of temperatuie on such cells is important. One can envisage these cells being used in solar concentrator systems with a flowing electrolyte cooler. Thus operation at temperatures above ambient is possible and may offer significant advantages. The reaction rates on the surface of the semiconductor will be enhanced at the higher temperatures and there may be improvments in wavelength response and bias requirements of the cell. Thermal effects on the wavelength response of SnO₂ electrodes have been observed and attributed to thermal shifts in the bandgap¹. Here we explore the effects of temperature on the flatband potential V_fb and hence the bias requirements of a photo-electrolysis cell.