Uhlig Model of Oxidation Kinetics

Abstract

IT is well known that a space charge region is usually present in semiconducting oxides at metal-semiconductor junctions due to equalizing of Fermi levels at the junction¹. Uhlig² has pointed out that this space charge layer may be a determining factor for growth rate and for growth law. Specifically, Uhlig proposes that the space charge layer limits the flow of electrons (and thus the flow of ions) from metal to oxide, so the variation of the space charge layer characteristics with film thickness determines the growth law. The purpose of this communication is to point out some basic errors in the treatment of the model so that further development of this approach, as well as comparison with new experimental results, can be fruitful.