Abstract
SINGLE crystal layers of silicon up to several μ thick have been deposited on to a heated single crystal silicon substrate from a sublimating source. We believe we can grow good epitaxial crystals at a lower growing temperature than previous experiments1 by reducing the growth rate in a good vacuum free from contamination.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Similar content being viewed by others
References
Unvala, B. A., Nature, 194, 966 (1962). Theuerer, H. C., J. Electrochem. Soc., 108, 649 (1961).
Lander, J. J., and Morrison, J., J. App. Phys., 33, 2089 (1961).
Nannichi, Y., Jap. J. App. Phys., 2, 199 (1963). Honig, R. E., J. Chem. Phys., 22, 1610 (1954). Batdorf, R. L., and Smits, F. M., J. App. Phys., 30, 259 (1959).
Moll, J. L., Meyer, N. I., and Bartelink, D. J., Studies of Microplasmas and High-Field Effects in Silicon, Quart. Status Rep., No. 5 (Stanford University, 1961).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
NANNICHI, Y. Epitaxial Growth of Silicon by Vacuum Sublimation. Nature 200, 1087–1088 (1963). https://doi.org/10.1038/2001087c0
Issue Date:
DOI: https://doi.org/10.1038/2001087c0
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.
