Abstract
EPITAXIAL layers of silicon have been prepared by the hydrogen reduction of silicon tetrachloride at raised temperatures1,2. The rate of deposition of silicon is dependent on the total gas flow-rate, the molecular percentage of silicon tetrachloride in the hydrogen and on the silicon substrate temperature.
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References
Theuerer, H. C., J. Electrochem. Soc., 108, 649 (1961).
Mark, A., J. Electrochem. Soc., 107, 568 (1960).
Atalla, M. M., Tannenbaum, E., and Scheibner, E. J., Bell System Tech. J., 38, No. 3, 749 (1959).
Liimatainen, T. M., Proc. Inst. Elec. Eng., 106, B, 385 (1959).
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JOYCE, B., BALDREY, J. Selective Epitaxial Deposition of Silicon. Nature 195, 485–486 (1962). https://doi.org/10.1038/195485a0
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DOI: https://doi.org/10.1038/195485a0
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