X-Ray Analysis of Parallel Growth and Disorder in Silicon Carbide Crystals

Abstract

IT is well known that silicon carbide forms a great variety of polytypes. The significance of these polytypes is so far not fully understood, although the known types appear to be consistent with the theory postulated by Ramsdell and Kohn¹ according to which : “Each polymer is characterised by a particular temperature stability range. At a given characteristic temperature a single type of polymer would produce a ‘pure type’ …. If stability ranges overlap two polymers might exist simultaneously resulting in a ‘mixed type’”.