Abstract
A PROBLEM in the production of transistor structures by diffusion is to control the surface concentration at a required level (about 5 × 1018 atoms/cm.3 in a typical case). Diffusion of phosphorus by conventional methods produces concentrations between 1020–1021 atoms/cm.3 due to the high solubility of the phosphorus at the diffusion temperatures1. A method of obtaining desired values of surface concentration over the range 5 × 1016 to 5 × 1018 atoms/cm.3 by controlling the phosphorus vapour pressure has been successfully evolved.
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References
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COUPLAND, M. Control of Surface Concentration in the Diffusion of Phosphorus in Silicon. Nature 181, 1331–1332 (1958). https://doi.org/10.1038/1811331b0
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DOI: https://doi.org/10.1038/1811331b0
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