Abstract
IN the operation of barrier-layer cells such as contact rectifiers and photo-voltaic cells, a factor of paramount importance is the height of the potential barrier at the semiconductor/metal electrode interface. Such characteristics as the photo-E.M.F., the forward and reverse resistances, and the turnover or breakdown voltage are all dependent on the barrier-height (VD); yet the quantitative information available is rather meagre.
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BILLIG, E., RIDOUT, M. Height of the Potential Barrier in Contact Rectifiers and its Change with Temperature. Nature 167, 1028–1029 (1951). https://doi.org/10.1038/1671028a0
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DOI: https://doi.org/10.1038/1671028a0
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